Investigating the Influence of TiC and SiC Particle Concentration on Electrodeposited Ni-TiC-SiC Composite plating
نویسندگان
چکیده
منابع مشابه
Synthesis and Sintering of Ti3SiC2–SiC Composites through Reactive Hot-Pressing of TiC and Si Precursors
MAX phases are an attractive class of layered solids that have recently attracted a great deal of attention due to their unusual and unique composition. The ternary compound Ti3SiC2 is an example of a material that combines the properties of ceramics and metals. As a ceramic, they are high stiff. Some of them are resistant to oxidation, creep, fatigue, corrosion. They are extremely refractory a...
متن کاملThe Effect of TiC Additive with Al2O3-Y2O3 on the Microstructure and Mechanical Properties of SiC Matrix Composites
In this research, the SiC-matrix composite with different amounts of TiC (0, 2.5, 5, 7.5, and 10 wt%) supplemented with additives including 4.3 wt% Al2O3 and 5.7 wt% Y2O3 were utilized to initiate the required liquid phase. The sintering process was performed using pressureless sintering at 1900 °C for 1.5 hours under argon atmosphere. The compos...
متن کاملمروری بر تاثیر افزودنی‌های TiC و TiB2 بر سینترپذیری و خواص مکانیکی کامپوزیت‌های زمینه SiC
کاربید سیلیکون (SiCSiC) به دلیل خواص مکانیکی ایده آل همچون سختی بالا، چگالی پایین، دمای ذوب بالا، مدول بالا و غیره به یک ماده مهندسی مناسب برای کاربردهای دما بالا و مناسب برای ابزارهای برشی تبدیل شده است. گرچه محدودیت‌های نیز برای استفاده از این ماده وجود دارد، از جمله زینترپذیری ضعیف و چقرمگی شکست پایین آن. از اینرو تقویت کننده‌هایی به منظور بهبود زینترپذیری و خواص مکانیکی به زمینه SiC افزوده ...
متن کاملTi-TiC-TiC/DLC gradient nano-composite film on a biomedical NiTi alloy.
Ti-TiC-TiC/diamond-like carbon (DLC) gradient nano-composite films have been prepared on NiTi alloy substrates by the technique of plasma immersion ion implantation and deposition (PIIID) combined with plasma-enhanced chemical vapor deposition (PECVD). The influence of negative bias voltage applied to the substrate (from -100 V to -500 V) on the chemical structure, microstructure, mechanical pr...
متن کاملCharacterization of Ni-implanted GaN and SiC
High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...
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ژورنال
عنوان ژورنال: Journal of The Surface Finishing Society of Japan
سال: 2017
ISSN: 0915-1869,1884-3409
DOI: 10.4139/sfj.68.513